FDMC8200 vs FDMC8200S vs FDMC8200-CUT TAPE

 
PartNumberFDMC8200FDMC8200SFDMC8200-CUT TAPE
DescriptionMOSFET DUAL N-CHANNEL PowerTrenchMOSFET 30V Dual N-Channel PowerTrench MOSFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePower-33-8Power-33-8-
Number of Channels2 Channel2 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current18 A18 A-
Rds On Drain Source Resistance16 mOhms20 mOhms-
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.3 nC, 16 nC7.5 nC, 15.7 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.9 W, 2.2 W2.5 W-
ConfigurationDualDual-
Channel ModeEnhancement--
TradenamePowerTrenchPowerTrench SyncFET-
PackagingReelReel-
Height0.8 mm0.8 mm-
Length3 mm3 mm-
ProductMOSFET Small Signal--
SeriesFDMC8200FDMC8200S-
Transistor Type2 N-Channel2 N-Channel-
TypePower Trench MOSFET--
Width3 mm3 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min29 S, 56 S43 S-
Fall Time1.3 ns, 6 ns--
Product TypeMOSFETMOSFET-
Rise Time3.1 ns, 4 ns--
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time35 ns, 38 ns--
Typical Turn On Delay Time11 ns, 13 ns--
Unit Weight0.006561 oz0.006561 oz-
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