FDMC8651 vs FDMC86510 vs FDMC86520

 
PartNumberFDMC8651FDMC86510FDMC86520
DescriptionMOSFET 30V N-Channel Power Trench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePower-33-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current15 A--
Rds On Drain Source Resistance6.1 mOhms--
Vgs Gate Source Voltage12 V--
Qg Gate Charge19.4 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.3 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height0.8 mm--
Length3.3 mm--
SeriesFDMC8651--
Transistor Type1 N-Channel--
Width3.3 mm--
BrandON Semiconductor / Fairchild--
Fall Time6 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time18 ns--
Unit Weight0.001133 oz--
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