FDN306P vs FDN306P /306 vs FDN306P-CUT TAPE

 
PartNumberFDN306PFDN306P /306FDN306P-CUT TAPE
DescriptionMOSFET P-Ch PowerTrench Specified 1.8V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage12 V--
Id Continuous Drain Current2.6 A--
Rds On Drain Source Resistance40 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN306P--
Transistor Type1 P-Channel--
TypeMOSFET--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min10 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time11 ns--
Part # AliasesFDN306P_NL--
Unit Weight0.001058 oz--
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