FDN337N vs FDN337N / 337 vs FDN337N , MAX6459UTC

 
PartNumberFDN337NFDN337N / 337FDN337N , MAX6459UTC
DescriptionMOSFET SSOT-3 N-CH 30V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.2 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN337N--
Transistor Type1 N-Channel--
TypeFET--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min13 S--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time4 ns--
Part # AliasesFDN337N_NL--
Unit Weight0.001270 oz--
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