FDN359BN vs FDN359BN , 1N5248B-TAP vs FDN359BN-NL

 
PartNumberFDN359BNFDN359BN , 1N5248B-TAPFDN359BN-NL
DescriptionMOSFET 30V N-Channel PowerTrench MOSFET
ManufacturerON Semiconductor-
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSSOT-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current2.7 A--
Rds On Drain Source Resistance46 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation500 mW (1/2 W)--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.12 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDN359BN--
Transistor Type1 N-Channel--
Width1.4 mm--
BrandON Semiconductor / Fairchild--
Fall Time5 ns--
Product TypeMOSFET--
Rise Time5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time7 ns--
Unit Weight0.001058 oz--
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