FDP083N15A-F102 vs FDP083N15A vs FDP085N10A

 
PartNumberFDP083N15A-F102FDP083N15AFDP085N10A
DescriptionMOSFET 150V N-CHANNEL POWERTRENCH MOSFETMOSFET N-CH 150V TO-220-3MOSFET N-CH 100V TO-220-3
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current105 A--
Rds On Drain Source Resistance6.85 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge64.5 nC--
Pd Power Dissipation231 W--
ConfigurationSingle--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFDP083N15A--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min139 S--
Fall Time26 ns--
Product TypeMOSFET--
Rise Time58 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Part # AliasesFDP083N15A_F102--
Unit Weight0.063493 oz--
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