FDP8N50NZ vs FDP8N50NZ,FDP8N50, vs FDP8N50NZ-FSC

 
PartNumberFDP8N50NZFDP8N50NZ,FDP8N50,FDP8N50NZ-FSC
DescriptionMOSFET UNIFET2 500V
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current8 A--
Rds On Drain Source Resistance770 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation139 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameUniFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFDP8N50NZ--
Transistor Type1 N-Channel--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6.3 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time45 ns--
Unit Weight0.063493 oz--
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