FDS4435BZ vs FDS4435BZ , 1N5253BTR vs FDS4435BZ(P/B)

 
PartNumberFDS4435BZFDS4435BZ , 1N5253BTRFDS4435BZ(P/B)
DescriptionMOSFET 30V.PCH POWER TRENCH MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8.8 A--
Rds On Drain Source Resistance16 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesFDS4435BZ--
Transistor Type1 P-Channel--
TypeMOSFET--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min24 S--
Fall Time38 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time68 ns--
Typical Turn On Delay Time12 ns--
Part # AliasesFDS4435BZ_NL--
Unit Weight0.004586 oz--
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