FDS6673BZ vs FDS6673BZ , 1N5256B vs FDS6673BZ-CUT TAPE

 
PartNumberFDS6673BZFDS6673BZ , 1N5256BFDS6673BZ-CUT TAPE
DescriptionMOSFET -30V P-Channel PowerTrench MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14.5 A--
Rds On Drain Source Resistance6.5 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenamePowerTrench--
PackagingReel--
Height1.75 mm--
Length4.9 mm--
SeriesFDS6673BZ--
Transistor Type1 P-Channel--
TypeMOSFET--
Width3.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min60 S--
Fall Time105 ns--
Product TypeMOSFET--
Rise Time16 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time225 ns--
Typical Turn On Delay Time14 ns--
Unit Weight0.004586 oz--
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