FDT55AN06LA0 vs FDT5060 vs FDT5060L

 
PartNumberFDT55AN06LA0FDT5060FDT5060L
DescriptionMOSFET 60V N-Channel PowerTrench
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current12.1 A--
Rds On Drain Source Resistance46 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation8.9 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.8 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandON Semiconductor / Fairchild--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.003951 oz--
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