FDV303N vs FDV303N(BAY) vs FDV303N-CUT TAPE

 
PartNumberFDV303NFDV303N(BAY)FDV303N-CUT TAPE
DescriptionMOSFET N-Ch Digital
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current680 mA--
Rds On Drain Source Resistance450 mOhms--
Vgs Gate Source Voltage8 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation350 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.2 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
SeriesFDV303N--
Transistor Type1 N-Channel--
TypeMOSFET--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min1.45 S--
Fall Time8.5 ns--
Product TypeMOSFET--
Rise Time8.5 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time3 ns--
Part # AliasesFDV303N_NL--
Unit Weight0.000282 oz--
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