FF1000R17IE4 vs FF1000R17IE4 , 1N5352BG vs FF1000R17IE4BOSA1

 
PartNumberFF1000R17IE4FF1000R17IE4 , 1N5352BGFF1000R17IE4BOSA1
DescriptionIGBT Modules N-CH 1.7KV 1.39KAIGBT MODULE VCES 1700V 1000A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1700 V--
Collector Emitter Saturation Voltage2.45 V--
Continuous Collector Current at 25 C1390 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation6.25 kW--
Package / CasePRIME3--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height38 mm--
Length250 mm--
Width89 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity2--
SubcategoryIGBTs--
Part # AliasesFF1000R17IE4BOSA1 SP000609592--
Unit Weight2.646 lbs--
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