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| PartNumber | FF150R12KE3G_B2 | FF150R12KE3G | FF150R12KE3GB2HOSA1 |
| Description | IGBT Modules N-CH 1.2KV 225A | IGBT Modules 1200V 150A DUAL | IGBT MODULE VCES 1200V 150A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FF150R12KE3GB2HOSA1 SP000100759 | FF150R12KE3GHOSA1 SP000100740 | - |
| RoHS | - | N | - |
| Configuration | - | Dual | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 1.7 V | - |
| Continuous Collector Current at 25 C | - | 225 A | - |
| Gate Emitter Leakage Current | - | 400 nA | - |
| Pd Power Dissipation | - | 780 W | - |
| Package / Case | - | 62 mm | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 125 C | - |
| Height | - | 30.5 mm | - |
| Length | - | 106.4 mm | - |
| Width | - | 61.4 mm | - |
| Mounting Style | - | Chassis Mount | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Unit Weight | - | 12 oz | - |