 | | | |
| PartNumber | FF150R12ME3G | FF150R12ME3 | FF150R12ME3GBOSA1 |
| Description | IGBT Modules N-CH 1.2KV 200A | IGBT MODULE VCES 1200V 150A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Continuous Collector Current at 25 C | 200 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 695 W | - | - |
| Package / Case | EconoDUAL-3 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 152 mm | - | - |
| Width | 62 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FF150R12ME3GBOSA1 SP000317332 | - | - |
| Unit Weight | 12.169517 oz | - | - |