FF200R12KE4 vs FF200R12KE4P vs FF200R12KE4HOSA1

 
PartNumberFF200R12KE4FF200R12KE4PFF200R12KE4HOSA1
DescriptionIGBT Modules IGBT-MODULETrans IGBT Module N-CH 1200V 240A 1100000mW 7-Pin Tray
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.05 V--
Continuous Collector Current at 25 C240 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation1100 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height30.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesFF200R12KE4HOSA1 SP000370604--
Unit Weight12 oz--
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