PartNumber | FF225R12ME4 | FF225R12ME4_B11 | FF225R12ME4 , 1N5366B |
Description | IGBT Modules IGBT 1200V 225A | IGBT Modules IGBT Module 225A 1200V | |
Manufacturer | Infineon | Infineon | - |
Product Category | IGBT Modules | IGBT Modules | - |
RoHS | Y | Y | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
Collector Emitter Voltage VCEO Max | 1200 V | 1.2 kV | - |
Collector Emitter Saturation Voltage | 2.15 V | 1.85 V | - |
Continuous Collector Current at 25 C | 225 A | 225 A | - |
Gate Emitter Leakage Current | 400 nA | 400 nA | - |
Pd Power Dissipation | 1050 W | 1.05 kW | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Tray | Tray | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Mounting Style | Chassis Mount | Press Fit | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Product Type | IGBT Modules | IGBT Modules | - |
Factory Pack Quantity | 10 | 6 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | FF225R12ME4BOSA1 SP000405064 | FF225R12ME4B11BPSA1 SP000691802 | - |
Configuration | - | Dual | - |
Package / Case | - | 152 mm x 62.5 mm x 20.5 mm | - |