FF400R12KT3 vs FF400R12KT3_E vs FF400R12KT3EHOSA1

 
PartNumberFF400R12KT3FF400R12KT3_EFF400R12KT3EHOSA1
DescriptionIGBT Modules N-CH 1.2KV 580AIGBT Modules IGBT 1200V 400AIGBT MODULE VCES 650V 400A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualHex-
Collector Emitter Voltage VCEO Max1.2 kV600 V-
Collector Emitter Saturation Voltage2.15 V--
Continuous Collector Current at 25 C580 A200 A-
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation2 kW--
Package / Case62 mmEcono 3-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 150 C-
PackagingTrayTray-
Height30.9 mm17 mm-
Length106.4 mm122 mm-
Width61.4 mm62 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesFF400R12KT3HOSA1 SP000100791FS200R06KE3BOSA1 SP000091928-
Unit Weight11.887325 oz10.582189 oz-
RoHS-Y-
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