FF450R12KE4_E vs FF450R12KE4 vs FF450R12KE4EHOSA1

 
PartNumberFF450R12KE4_EFF450R12KE4FF450R12KE4EHOSA1
DescriptionIGBT ModulesIGBT Modules N-CH 1.2KV 520AIGBT MODULE VCES 600V 450A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesFF450R12KE4EHOSA1 SP001186148FF450R12KE4HOSA1 SP000370610-
Product-IGBT Silicon Modules-
Configuration-Dual-
Collector Emitter Voltage VCEO Max-1200 V-
Collector Emitter Saturation Voltage-2.15 V-
Continuous Collector Current at 25 C-520 A-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-2400 W-
Package / Case-62 mm-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Height-30.5 mm-
Length-106.4 mm-
Width-61.4 mm-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
Unit Weight-11.887325 oz-
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