FF900R12IE4 vs FF900R12IE4 FF800R17KF6- vs FF900R12IE4BOSA1

 
PartNumberFF900R12IE4FF900R12IE4 FF800R17KF6-FF900R12IE4BOSA1
DescriptionIGBT Modules IGBT 1200V 900AIGBT MODULE 1200V 900A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.05 V--
Continuous Collector Current at 25 C900 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation5.1 kW--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity3--
SubcategoryIGBTs--
Part # AliasesFF900R12IE4BOSA1 SP000614712--
Top