FF900R12IP4 vs FF900R12IP4 , 1N5386B vs FF900R12IP4BOSA2

 
PartNumberFF900R12IP4FF900R12IP4 , 1N5386BFF900R12IP4BOSA2
DescriptionIGBT Modules IGBT-MODULEIGBT MODULE 1200V 900A
ManufacturerInfineon--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.1 V--
Continuous Collector Current at 25 C900 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation5.1 kW--
Package / CasePRIME2--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTray--
Height38 mm--
Length172 mm--
Width89 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity3--
SubcategoryIGBTs--
Part # AliasesFF900R12IP4BOSA2 SP000609750--
Unit Weight1.819 lbs--
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