PartNumber | FF900R12IP4 | FF900R12IP4 , 1N5386B | FF900R12IP4BOSA2 |
Description | IGBT Modules IGBT-MODULE | IGBT MODULE 1200V 900A | |
Manufacturer | Infineon | - | - |
Product Category | IGBT Modules | - | - |
RoHS | Y | - | - |
Product | IGBT Silicon Modules | - | - |
Configuration | Dual | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.1 V | - | - |
Continuous Collector Current at 25 C | 900 A | - | - |
Gate Emitter Leakage Current | 400 nA | - | - |
Pd Power Dissipation | 5.1 kW | - | - |
Package / Case | PRIME2 | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tray | - | - |
Height | 38 mm | - | - |
Length | 172 mm | - | - |
Width | 89 mm | - | - |
Brand | Infineon Technologies | - | - |
Mounting Style | Chassis Mount | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Product Type | IGBT Modules | - | - |
Factory Pack Quantity | 3 | - | - |
Subcategory | IGBTs | - | - |
Part # Aliases | FF900R12IP4BOSA2 SP000609750 | - | - |
Unit Weight | 1.819 lbs | - | - |