FF900R12IP4DV vs FF900R12IP4D vs FF900R12IP4DBOSA2

 
PartNumberFF900R12IP4DVFF900R12IP4DFF900R12IP4DBOSA2
DescriptionIGBT ModulesIGBT Modules N-CH 1.2KV 900AIGBT MODULE VCES 1200V 900A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSY--
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity33-
SubcategoryIGBTsIGBTs-
Part # AliasesFF900R12IP4DVBOSA1 SP001124864FF900R12IP4DBOSA2 SP000614716-
Product-IGBT Silicon Modules-
Collector Emitter Voltage VCEO Max-1200 V-
Continuous Collector Current at 25 C-900 A-
Package / Case-PRIME2-
Minimum Operating Temperature-- 40 C-
Maximum Operating Temperature-+ 150 C-
Height-38 mm-
Length-172 mm-
Width-89 mm-
Mounting Style-Chassis Mount-
Maximum Gate Emitter Voltage-20 V-
Unit Weight-1.819 lbs-
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