PartNumber | FGH40N65UFDTU | FGH40N65UFDTU-F085 | FGH40N65UFD |
Description | IGBT Transistors N-ch / 40A 650V | IGBT Transistors N-ch / 40A 650V IGBT | |
Manufacturer | ON Semiconductor | ON Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247AB-3 | TO-247-3 | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Maximum Gate Emitter Voltage | 20 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Series | FGH40N65UFD | FGH40N65UF_F085 | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 80 A | 40 A | - |
Height | 20.6 mm | - | - |
Length | 15.6 mm | - | - |
Width | 4.7 mm | - | - |
Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 450 | 450 | - |
Subcategory | IGBTs | IGBTs | - |
Unit Weight | 0.225401 oz | 0.225401 oz | - |
Collector Emitter Saturation Voltage | - | 1.8 V | - |
Continuous Collector Current at 25 C | - | 80 A | - |
Pd Power Dissipation | - | 290 W | - |
Qualification | - | AEC-Q101 | - |
Gate Emitter Leakage Current | - | +/- 400 nA | - |
Part # Aliases | - | FGH40N65UFDTU_F085 | - |