FGH80N60FD2TU vs FGH80N60FD2TU(FGH80N60F vs FGH80N60FD2TU(FGH80N60FD

 
PartNumberFGH80N60FD2TUFGH80N60FD2TU(FGH80N60FFGH80N60FD2TU(FGH80N60FD
DescriptionIGBT Transistors 600V 80A Field Stop
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Maximum Gate Emitter Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFGH80N60FD2--
PackagingTube--
Continuous Collector Current Ic Max80 A--
Height20.82 mm--
Length15.87 mm--
Width4.82 mm--
BrandON Semiconductor / Fairchild--
Product TypeIGBT Transistors--
Factory Pack Quantity450--
SubcategoryIGBTs--
Unit Weight0.225401 oz--
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