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| PartNumber | FGP5N60LS | FGP5N60LS-FSC | FGP5N60UFD |
| Description | IGBT Transistors 600V/5A Field Stop Low Vcesat | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.8 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 10 A | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Series | FGP5N60LS | - | - |
| Packaging | Tube | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.063493 oz | - | - |