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| PartNumber | FGY100T65SCDT | FGY120T65S | FGY120T65SPD |
| Description | IGBT Transistors FS3TIGBT TO247 100A 650V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 25 V | - | - |
| Continuous Collector Current at 25 C | 200 A | - | - |
| Pd Power Dissipation | 750 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Packaging | Tube | - | - |
| Brand | ON Semiconductor | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 450 | - | - |
| Subcategory | IGBTs | - | - |