FJNS3211RBU vs FJNS3210RBU vs FJNS3210RTA

 
PartNumberFJNS3211RBUFJNS3210RBUFJNS3210RTA
DescriptionBipolar Transistors - Pre-Biased NPN/40V/100mA/22KTRANS PREBIAS NPN 300MW TO92STRANS PREBIAS NPN 300MW TO92S
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor22 kOhms--
Mounting StyleThrough Hole--
Package / CaseTO-92-3--
DC Collector/Base Gain hfe Min100--
Collector Emitter Voltage VCEO Max40 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation300 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingBulk--
DC Current Gain hFE Max600--
Emitter Base Voltage VEBO5 V--
Height3.7 mm--
Length4 mm--
TypeNPN Epitaxial Silicon Transistor--
Width2.31 mm--
BrandON Semiconductor / Fairchild--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.006286 oz--
Top