FP25R12W2T4 vs FP25R12W2T4_B11 vs FP25R12W2T4 , 1SMB5918BT

 
PartNumberFP25R12W2T4FP25R12W2T4_B11FP25R12W2T4 , 1SMB5918BT
DescriptionIGBT Modules N-CH 1.2KV 39AIGBT Modules IGBT 1200V 25A
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationArray 7--
Collector Emitter Voltage VCEO Max1200 V1200 V-
Continuous Collector Current at 25 C39 A39 A-
Package / CaseEASY2B--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height12 mm--
Length56.7 mm--
SeriesIGBT4IGBT4-
Width62.8 mm--
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1515-
SubcategoryIGBTsIGBTs-
TradenameTRENCHSTOPTRENCHSTOP-
Part # AliasesFP25R12W2T4BOMA1 SP000307561FP25R12W2T4B11BOMA1 SP000413966-
Unit Weight1.375685 oz1.375685 oz-
Collector Emitter Saturation Voltage-2.25 V-
Gate Emitter Leakage Current-400 nA-
Pd Power Dissipation-175 W-
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