 |  | | |
| PartNumber | FP50R12KT4G_B15 | FP50R12KT4G | FP50R12KT4GB15BOSA1 |
| Description | IGBT Modules IGBT Module 50A 1200V | IGBT Modules IGBT Module 50A 1200V | IGBT MODULE VCES 600V 50A |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| RoHS | Y | Y | - |
| Packaging | Tray | Tray | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FP50R12KT4GB15BOSA1 SP000821806 | FP50R12KT4GBOSA1 SP000879284 | - |
| Product | - | IGBT Silicon Modules | - |
| Configuration | - | 3-Phase | - |
| Collector Emitter Voltage VCEO Max | - | 1200 V | - |
| Collector Emitter Saturation Voltage | - | 2.25 V | - |
| Continuous Collector Current at 25 C | - | 50 A | - |
| Gate Emitter Leakage Current | - | 100 nA | - |
| Pd Power Dissipation | - | 280 W | - |
| Package / Case | - | Econo 3 | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Mounting Style | - | Chassis Mount | - |
| Maximum Gate Emitter Voltage | - | 20 V | - |
| Unit Weight | - | 10.582189 oz | - |