FQA13N80-F109 vs FQA13N80 vs FQA13N80,13N80,

 
PartNumberFQA13N80-F109FQA13N80FQA13N80,13N80,
DescriptionMOSFET TO-3P N-CH 600VMOSFET TO-3P N-CH 600V
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-3PN-3TO-3PN-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current12.6 A12.6 A-
Rds On Drain Source Resistance750 mOhms750 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation300 W300 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameQFET--
PackagingTubeTube-
Height20.1 mm20.1 mm-
Length16.2 mm16.2 mm-
SeriesFQA13N80_F109--
Transistor Type1 N-Channel1 N-Channel-
Width5 mm5 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time110 ns110 ns-
Product TypeMOSFETMOSFET-
Rise Time150 ns150 ns-
Factory Pack Quantity45030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time155 ns155 ns-
Typical Turn On Delay Time60 ns60 ns-
Part # AliasesFQA13N80_F109FQA13N80_NL-
Unit Weight0.225789 oz0.000198 oz-
Type-MOSFET-
Forward Transconductance Min-13 S-
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