FQA7N80 vs FQA7N80,FQA7N80C vs FQA7N80A

 
PartNumberFQA7N80FQA7N80,FQA7N80CFQA7N80A
DescriptionMOSFET 800V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current7.2 A--
Rds On Drain Source Resistance1.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation198 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6 S--
Fall Time55 ns--
Product TypeMOSFET--
Rise Time80 ns--
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time35 ns--
Part # AliasesFQA7N80_NL--
Unit Weight0.000198 oz--
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