FQAF12P20 vs FQAF12N60 vs FQAF12P20C

 
PartNumberFQAF12P20FQAF12N60FQAF12P20C
DescriptionMOSFET 200V P-Channel QFETMOSFET N-CH 600V 7.8A TO-3PF
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-3PN-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current11.5 A--
Rds On Drain Source Resistance470 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation70 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height20.1 mm--
Length16.2 mm--
Transistor Type1 P-Channel--
TypeMOSFET--
Width5 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min6 S--
Fall Time60 ns--
Product TypeMOSFET--
Rise Time195 ns--
Factory Pack Quantity360--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.000194 oz--
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