FQB22P10TM vs FQB22P10TM-BL vs FQB22P10TM-CUT TAPE

 
PartNumberFQB22P10TMFQB22P10TM-BLFQB22P10TM-CUT TAPE
DescriptionMOSFET 100V P-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current22 A--
Rds On Drain Source Resistance125 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height4.83 mm--
Length10.67 mm--
SeriesFQB22P10--
Transistor Type1 P-Channel--
TypeMOSFET--
Width9.65 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min13.5 S--
Fall Time110 ns--
Product TypeMOSFET--
Rise Time170 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns--
Typical Turn On Delay Time17 ns--
Part # AliasesFQB22P10TM_NL--
Unit Weight0.046296 oz--
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