FQD10N20CTM vs FQD10N20CTF vs FQD10N20CT

 
PartNumberFQD10N20CTMFQD10N20CTFFQD10N20CT
DescriptionMOSFET N-CH/200V/10A/QFETMOSFET N-CH/200V/10A/QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current7.8 A7.8 A-
Rds On Drain Source Resistance360 mOhms290 mOhms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation50 W50 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD10N20C--
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Fall Time72 ns72 ns-
Product TypeMOSFETMOSFET-
Rise Time92 ns92 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time70 ns70 ns-
Typical Turn On Delay Time11 ns11 ns-
Part # AliasesFQD10N20CTM_NLFQD10N20CTF_NL-
Unit Weight0.009184 oz0.139332 oz-
Type-MOSFET-
Forward Transconductance Min-5.6 S-
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