FQD2N80TM vs FQD2N80TF vs FQD2N80TF-NL

 
PartNumberFQD2N80TMFQD2N80TFFQD2N80TF-NL
DescriptionMOSFET 800V N-Channel QFETMOSFET 800V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSEE-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage800 V800 V-
Id Continuous Drain Current1.8 A1.8 A-
Rds On Drain Source Resistance6.3 Ohms6.3 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W2.5 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm2.39 mm-
Length6.73 mm6.73 mm-
SeriesFQD2N80--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width6.22 mm6.22 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min2.4 S2.4 S-
Fall Time28 ns28 ns-
Product TypeMOSFETMOSFET-
Rise Time30 ns30 ns-
Factory Pack Quantity25002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time25 ns25 ns-
Typical Turn On Delay Time12 ns12 ns-
Unit Weight0.009184 oz0.139332 oz-
Part # Aliases-FQD2N80TF_NL-
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