FQD3N30TF vs FQD3N30 vs FQD3N30TM

 
PartNumberFQD3N30TFFQD3N30FQD3N30TM
DescriptionMOSFET N-CH/300V/2.4A/2.2OHMMOSFET N-CH 300V 2.4A DPAK
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage300 V--
Id Continuous Drain Current2.4 A--
Rds On Drain Source Resistance2.2 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
Height2.39 mm--
Length6.73 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time40 ns--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.139332 oz--
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