FQD6N40CTM vs FQD6N40CTM_NBEA002 vs FQD6N40CTM-CUT TAPE

 
PartNumberFQD6N40CTMFQD6N40CTM_NBEA002FQD6N40CTM-CUT TAPE
DescriptionMOSFET 400V N-Channel Advance QFETIGBT Transistors MOSFET 400V N-Channel QFET
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSE--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage400 V--
Id Continuous Drain Current4.5 A--
Rds On Drain Source Resistance1 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.39 mm--
Length6.73 mm--
SeriesFQD6N40C--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFET--
Width6.22 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.7 S--
Fall Time38 ns38 ns-
Product TypeMOSFET--
Rise Time65 ns65 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns21 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesFQD6N40CTM_NL--
Unit Weight0.016579 oz0.009184 oz-
Package Case-TO-252-3-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-30 V-
Id Continuous Drain Current-4.5 A-
Vds Drain Source Breakdown Voltage-400 V-
Rds On Drain Source Resistance-1 Ohms-
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