 | |  | |
| PartNumber | FQI12N60CTU | FQI12N60TU | FQI12N60C |
| Description | MOSFET 600V N-Channel Adv Q-FET C-Series | MOSFET | |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-262-3 | TO-262-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | - |
| Id Continuous Drain Current | 12 A | 10.5 A | - |
| Rds On Drain Source Resistance | 650 mOhms | 700 mOhms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 225 W | 3.13 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 7.88 mm | 7.88 mm | - |
| Length | 10.29 mm | 10.29 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | MOSFET | MOSFET | - |
| Width | 4.83 mm | 4.83 mm | - |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 90 ns | 85 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 85 ns | 115 ns | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 155 ns | 95 ns | - |
| Typical Turn On Delay Time | 30 ns | 30 ns | - |
| Part # Aliases | FQI12N60CTU_NL | - | - |
| Unit Weight | 0.084199 oz | 0.054004 oz | - |