FQI13N50CTU vs FQI13N50 vs FQI13N50C

 
PartNumberFQI13N50CTUFQI13N50FQI13N50C
DescriptionMOSFET N-CH/500V/13A/QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance390 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation195 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
SeriesFQI13N50C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min15 S--
Fall Time100 ns--
Product TypeMOSFET--
Rise Time100 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesFQI13N50CTU_NL--
Unit Weight0.073511 oz--
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