FQI7N10LTU vs FQI7N10 vs FQI7N10L

 
PartNumberFQI7N10LTUFQI7N10FQI7N10L
DescriptionMOSFET 100V N-Ch QFET Logic Level
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-262-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current7.3 A--
Rds On Drain Source Resistance275 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation3.75 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height7.88 mm--
Length10.29 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.83 mm--
BrandON Semiconductor / Fairchild--
Fall Time50 ns--
Product TypeMOSFET--
Rise Time100 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time17 ns--
Typical Turn On Delay Time9 ns--
Unit Weight0.084199 oz--
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