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| PartNumber | FQI8N60CTU | FQI8N60 | FQI8N60C |
| Description | MOSFET 600V N-Channel Adv Q-FET C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 1.2 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.13 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQI8N60C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 8.7 S | - | - |
| Fall Time | 64.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 60.5 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 81 ns | - | - |
| Typical Turn On Delay Time | 16.5 ns | - | - |
| Part # Aliases | FQI8N60CTU_NL | - | - |
| Unit Weight | 0.073511 oz | - | - |