FQP10N20C vs FQP10N20C , MM3Z5231B vs FQP10N20C,10N20C,

 
PartNumberFQP10N20CFQP10N20C , MM3Z5231BFQP10N20C,10N20C,
DescriptionMOSFET 200V N-Ch MOSFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current9.5 A--
Rds On Drain Source Resistance360 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation72 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
SeriesFQP10N20C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.5 S--
Fall Time72 ns--
Product TypeMOSFET--
Rise Time92 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time70 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.063493 oz--
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