FQP18N20V2 vs FQP18N50 vs FQP18N20V2 PV218N20

 
PartNumberFQP18N20V2FQP18N50FQP18N20V2 PV218N20
DescriptionMOSFET 200V N-Ch adv QFET V2 Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current18 A--
Rds On Drain Source Resistance140 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation123 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height16.3 mm--
Length10.67 mm--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.7 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min11 S--
Fall Time62 ns--
Product TypeMOSFET--
Rise Time133 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time16 ns--
Unit Weight0.050717 oz--
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