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| PartNumber | FQP19N20C | FQP19N20C 19N20 FQP19N20 | FQP19N20C,19N20, |
| Description | MOSFET 200V N-Channel Advance Q-FET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 19 A | - | - |
| Rds On Drain Source Resistance | 170 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 139 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQP19N20C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 10.8 S | - | - |
| Fall Time | 115 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 150 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 135 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Part # Aliases | FQP19N20C_NL | - | - |
| Unit Weight | 0.063493 oz | - | - |