FQP6N60C vs FQP6N60 vs FQP6N60C,6N60,

 
PartNumberFQP6N60CFQP6N60FQP6N60C,6N60,
DescriptionMOSFET 600V N-Channel Adv Q-FET C-SeriesMOSFET 600V N-Channel QFET
ManufacturerON SemiconductorON Semiconductor-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V600 V-
Id Continuous Drain Current5.5 A6.2 A-
Rds On Drain Source Resistance2 Ohms1.5 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation125 W130 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
SeriesFQP6N60C--
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min4.8 S6 S-
Fall Time45 ns45 ns-
Product TypeMOSFETMOSFET-
Rise Time45 ns70 ns-
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time45 ns40 ns-
Typical Turn On Delay Time15 ns20 ns-
Part # AliasesFQP6N60C_NL--
Unit Weight0.063493 oz0.050717 oz-
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