FQPF630 vs FQPF60UP20DN vs FQPF630(IRFS630)

 
PartNumberFQPF630FQPF60UP20DNFQPF630(IRFS630)
DescriptionMOSFET 200V N-Channel QFET
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current6.3 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation38 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesFQPF630--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min4.2 S--
Fall Time64 ns--
Product TypeMOSFET--
Rise Time75 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns--
Typical Turn On Delay Time8 ns--
Part # AliasesFQPF630_NL--
Unit Weight0.080072 oz--
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