FQPF6N25 vs FQPF6N15 vs FQPF6N40

 
PartNumberFQPF6N25FQPF6N15FQPF6N40
DescriptionMOSFET 250V N-Channel QFETMOSFET
ManufacturerON SemiconductorON SemiconductorFSC
Product CategoryMOSFETMOSFETIC Chips
RoHSEY-
TechnologySiSiMOSFET (Metal Oxide)
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220-3TO-220-3TO-220-3 Full Pack
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage250 V150 V-
Id Continuous Drain Current4 A5 A-
Rds On Drain Source Resistance1 Ohms600 mOhms-
Vgs Gate Source Voltage30 V25 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation37 W38 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTubeTube
Height16.3 mm16.3 mm-
Length10.67 mm10.67 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeMOSFETMOSFET-
Width4.7 mm4.7 mm-
BrandON Semiconductor / FairchildON Semiconductor / Fairchild-
Forward Transconductance Min2.1 S--
Fall Time30 ns27 ns-
Product TypeMOSFETMOSFET-
Rise Time65 ns45 ns-
Factory Pack Quantity5050-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time7.5 ns13 ns-
Typical Turn On Delay Time8 ns4.7 ns-
Unit Weight0.090478 oz0.074950 oz-
Series--QFET
Part Status--Obsolete
FET Type--N-Channel
Drain to Source Voltage (Vdss)--400V
Current Continuous Drain (Id) @ 25°C--6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)--10V
Vgs(th) (Max) @ Id--4V @ 250A
Gate Charge (Qg) (Max) @ Vgs--20nC @ 10V
Vgs (Max)--±30V
Input Capacitance (Ciss) (Max) @ Vds--625pF @ 25V
FET Feature---
Power Dissipation (Max)--38W (Tc)
Rds On (Max) @ Id, Vgs--1 Ohm @ 3A, 10V
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-220F
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