FQPF6N80C vs FQPF6N80C 2SK4013 vs FQPF6N80C,6N80C,

 
PartNumberFQPF6N80CFQPF6N80C 2SK4013FQPF6N80C,6N80C,
DescriptionMOSFET 800V N-Ch Q-FET advance C-Series
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current5.5 A--
Rds On Drain Source Resistance2.5 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation51 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameQFET--
PackagingTube--
Height16.07 mm--
Length10.36 mm--
SeriesFQPF6N80C--
Transistor Type1 N-Channel--
TypeMOSFET--
Width4.9 mm--
BrandON Semiconductor / Fairchild--
Forward Transconductance Min5.4 S--
Fall Time44 ns--
Product TypeMOSFET--
Rise Time65 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time47 ns--
Typical Turn On Delay Time26 ns--
Part # AliasesFQPF6N80C_NL--
Unit Weight0.080072 oz--
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