FS200R07A5E3S6BPSA1 vs FS200R07A1E3BOSA1 vs FS200R07A1E3

 
PartNumberFS200R07A5E3S6BPSA1FS200R07A1E3BOSA1FS200R07A1E3
DescriptionIGBT ModulesIGBT 650V 250A 790WIGBT Modules
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT ModulesIGBTs - ModulesIGBTs - Modules
RoHSY--
PackagingTray--
BrandInfineon Technologies--
Moisture SensitiveYes--
Product TypeIGBT Modules--
Factory Pack Quantity12--
SubcategoryIGBTs--
Part # AliasesFS200R07A5E3_S6 SP001150884--
Series--FS200R07A1
Package Case-ModuleHybridPack1
Mounting Type-Surface Mount-
Supplier Device Package-Module-
Input-Standard-
Configuration-Three Phase Inverter3-Phase
Power Max-790W-
Current Collector Ic Max-250A-
Voltage Collector Emitter Breakdown Max-650V-
Current Collector Cutoff Max-1mA-
IGBT Type---
Vce on Max Vge Ic-1.9V @ 15V, 200A-
Input Capacitance Cies Vce-13nF @ 25V-
NTC Thermistor-Yes-
Product--IGBT Silicon Modules
Part Aliases--SP000663442
Mounting Style--Through Hole
Pd Power Dissipation--790 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 40 C
Collector Emitter Voltage VCEO Max--650 V
Collector Emitter Saturation Voltage--1.7 V
Continuous Collector Current at 25 C--250 A
Gate Emitter Leakage Current--400 nA
Maximum Gate Emitter Voltage--+/- 20 V
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