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| PartNumber | FZ400R12KE3B1 | FZ400R12KE3 | FZ400R12KE3B1HOSA1 |
| Description | IGBT Modules N-CH 1.2KV 650A | IGBT Modules 1200V 400A SINGLE | MOD IGBT MED PWR 62MM-2 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Modules | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | - |
| Configuration | Single Dual Collector Dual Emitter | Single | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Continuous Collector Current at 25 C | 650 A | 650 A | - |
| Package / Case | 62 mm | 62 mm | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Packaging | Tray | Tray | - |
| Height | 36.5 mm | 36.5 mm | - |
| Length | 106.4 mm | 106.4 mm | - |
| Width | 61.4 mm | 61.4 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | FZ400R12KE3B1HOSA1 SP000100738 | FZ400R12KE3HOSA1 SP000100737 | - |
| RoHS | - | N | - |
| Collector Emitter Saturation Voltage | - | 1.7 V | - |
| Gate Emitter Leakage Current | - | 400 nA | - |
| Pd Power Dissipation | - | 2250 W | - |