FZT657TA vs FZT657TC vs FZT657TAPBF

 
PartNumberFZT657TAFZT657TCFZT657TAPBF
DescriptionBipolar Transistors - BJT NPN High VoltageBipolar Transistors - BJT NPN High Voltage
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max300 V300 V-
Collector Base Voltage VCBO300 V300 V-
Emitter Base Voltage VEBO5 V5 V-
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current0.5 A0.5 A-
Gain Bandwidth Product fT30 MHz30 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesFZT657FZT657-
DC Current Gain hFE Max40--
Height1.65 mm1.65 mm (Max)-
Length6.7 mm6.7 mm (Max)-
PackagingReelReel-
Width3.7 mm3.7 mm (Max)-
BrandDiodes IncorporatedDiodes Incorporated-
Continuous Collector Current0.5 A0.5 A-
DC Collector/Base Gain hfe Min40 at 10 mA, 5 V, 50 at 100 mA, 5 V40-
Pd Power Dissipation2 W2 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10004000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
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